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Wafer Scale Near Perfect Ordered Porous Aluminum On

Wafer-Scale Near-Perfect Ordered Porous Alumina on ...

Apr 22, 2010  Nanoporous anodic aluminum oxide (AAO) has been widely used for the development of various functional nanostructures. So far, highly ordered AAO on substrates could only be prepared using a nanoindentation method via hard stamping and lithographic techniques that are not scalable to a wafer-scale. Here we report on a step and flash imprint

Cited by: 98

Wafer-Scale Near-Perfect Ordered Porous Alumina on ...

Request PDF Wafer-Scale Near-Perfect Ordered Porous Alumina on Substrates by Step and Flash Imprint Lithography Nanoporous anodic aluminum oxide (AAO) has been widely used for the development ...

Wafer-scale near-perfect ordered porous alumina on ...

May 01, 2010  Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. Coronavirus: ... SFIL was used to prepattern a polymer mask layer, and wet-etching process was employed to transfer the nanopatterns to aluminum (Al) films, thus creating ordered nanoindentation on the Al surface. The ordered nanoindentation ...

Cited by: 98

Wafer‐Scale Ni Imprint Stamps for Porous Alumina Membranes ...

Jul 28, 2006  Tanu Suryadi Kustandi, Wei Wei Loh, Han Gao, Hong Yee Low, Wafer-Scale Near-Perfect Ordered Porous Alumina on Substrates by Step and Flash Imprint Lithography, ACS Nano, 10.1021/nn1001744, 4, 5, (2561-2568), (2010).

Cited by: 179

Making the right impression - A*STAR Research

Jul 06, 2010  Kustandi, T.S., Loh, W.W., Gao, H., Low, H.Y. Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. ACS Nano 4 , 2561–2568 (2010). article This article was made for A*STAR Research by Nature Research Custom Media, part of Springer Nature

Versatile pattern generation of periodic, high aspect ...

Dec 01, 2013  Kustandi TS, Loh WW, Gao H, Low HY. Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. ACS Nano. 2010; 4:2561–2568. doi: 10.1021/nn1001744. Huang Z, Geyer N, Werner P, de Boor J, Gosele U. Metal-assisted chemical etching of silicon: a review. Adv Mater.

Wafer-scale near-perfect ordered porous alumina on ...

May 01, 2010  Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. Coronavirus: ... SFIL was used to prepattern a polymer mask layer, and wet-etching process was employed to transfer the nanopatterns to aluminum (Al) films, thus creating ordered nanoindentation on the Al surface. The ordered nanoindentation ...

Making the right impression - A*STAR Research

Jul 06, 2010  Kustandi, T.S., Loh, W.W., Gao, H., Low, H.Y. Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. ACS Nano 4 , 2561–2568 (2010). article This article was made for A*STAR Research by Nature Research Custom Media, part of Springer Nature

Wafer-scale high anti-reflective nano/micro hybrid ...

Sep 01, 2020  Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography ACS Nano , 4 ( 2010 ) , pp. 2561 - 2568 CrossRef View Record in Scopus Google Scholar

Fabrication of ordered nanoporous anodic alumina ...

Feb 21, 2011  Kustandi TS, Loh WW, Gao H, Low HY: Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. ACS Nano 2010, 5: 2561. 10.1021/nn1001744. Article Google Scholar 18. Grzybowski BA, Bishop KJM: Micro- and nanoprinting into solids using reaction-diffusion etching and hydrogel stamps.

Structural Engineering of Porous Anodic Aluminum Oxide ...

Jul 18, 2015  T.S. Kustandi, W.W. Loh, H. Gao, H.Y. Low, Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. ACS Nano 4 , 2561–2568 (2010) Google Scholar 104.

Versatile pattern generation of periodic, high aspect ...

Kustandi TS, Loh WW, Gao H, Low HY. Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. ACS Nano. 2010; 4:2561–2568. doi: 10.1021/nn1001744. Huang Z, Geyer N, Werner P, de Boor J, Gosele U. Metal-assisted chemical etching of silicon: a review. Adv Mater.

(PDF) Fast anodization fabrication of AAO and barrier ...

Tanu SK, Wei WL, Han G, Hong YL: Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. ACS Nano 2010, 4 (5):2561–2568.

Fabrication of Anodic Alumina Templates on Ti/Si Substrate ...

Abstract: Thin anodic alumina (AAO) templates with uniform nanoscale pore diameters and interpore distances were fabricated by a two-step anodization technique on a Si-based (AAO/Ti/Si structure) under controllable anodizing conditions. The obtained thin AAO templates were approximately 60 nm in pore diameter and 1.2 µm in length with 110 nm interpore distances in

Nanoparticle Arrays on Surfaces Fabricated Using Anodic ...

Apr 30, 2003  Tanu Suryadi Kustandi, Wei Wei Loh, Han Gao, Hong Yee Low, Wafer-Scale Near-Perfect Ordered Porous Alumina on Substrates by Step and Flash Imprint Lithography, ACS Nano, 10.1021/nn1001744, 4, 5, (2561-2568), (2010).

Highly organised and dense vertical silicon nanowire ...

Jun 17, 2013  Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. ACS Nano. 2010; 8 (5):2561–2568. doi: 10.1021/nn1001744. Nasir ME, Allsopp DWE, Bowen CR, Hubbard G, Parsons KP. The fabrication of mono-domain highly ordered nanoporous alumina on a wafer scale by a guided electric field.

In Situ Investigation of the Early-Stage Growth of ...

Jan 01, 2018  As showed in Figure 1, the porous alumina is characterized by the height h of the pores, the period a of the porous array, and the domain size Ad (area with a coherent hexagonal order). The GISAXS measurements were performed at the SixS beamline of the Synchrotron SOLEIL in Saint-Aubin (Paris, France) using a photon energy of 18.4 keV.

In Situ Investigation of the Early-Stage Growth of ...

We report the successful use of in situ grazing incidence small-angle X-ray scattering to follow the anodization of aluminum. A dedicated electrochemical cell was designed and developed for this purpose with low X-ray absorption, with the possibility to access all azimuthal angles (360#x00B0;) and to remotely control the temperature of the electrolyte. Three well-known

Nanomaterials: Making the right impression

Jul 07, 2010  A team led by Tanu Kustandi from the A*STAR Institute of Materials Research and Engineering in Singapore has now developed a microfabrication procedure that is compatible with those used in the semiconductor industry to generate highly ordered nanoporous alumina films on large silicon wafers ("Wafer-Scale Near-Perfect Ordered Porous Alumina on ...

Graphene - Wikipedia

Graphene (/ ˈ ɡ r æ f iː n /) is an allotrope of carbon consisting of a single layer of atoms arranged in a two-dimensional honeycomb lattice nanostructure. The name is derived from "graphite" and the suffix -ene, reflecting the fact that the graphite allotrope of carbon contains numerous double bonds.. Each atom in a graphene sheet is connected to its three nearest neighbors by a σ

Wafer-scale near-perfect ordered porous alumina on ...

May 01, 2010  Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. Coronavirus: ... SFIL was used to prepattern a polymer mask layer, and wet-etching process was employed to transfer the nanopatterns to aluminum (Al) films, thus creating ordered nanoindentation on the Al surface. The ordered nanoindentation ...

Highly organised and dense vertical silicon nanowire ...

Jun 17, 2013  Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. ACS Nano. 2010; 8 (5):2561–2568. doi: 10.1021/nn1001744. Nasir ME, Allsopp DWE, Bowen CR, Hubbard G, Parsons KP. The fabrication of mono-domain highly ordered nanoporous alumina on a wafer scale by a guided electric field.

Wafer-scale high anti-reflective nano/micro hybrid ...

Sep 01, 2020  Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography ACS Nano , 4 ( 2010 ) , pp. 2561 - 2568 CrossRef View Record in Scopus Google Scholar

Fabrication of ordered nanoporous anodic alumina ...

Feb 21, 2011  Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. Kustandi TS, Loh WW, Gao H, Low HY. ACS Nano, 4(5):2561-2568, 01 May 2010 Cited by: 13 articles PMID: 20411953

Effects of the voltage and time of anodization on ...

Dec 01, 2015  Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography ACS Nano , 4 ( 5 ) ( 2010 ) , pp. 2561 - 2568 CrossRef View Record in Scopus Google Scholar

AAO Templates with Different Patterns and Channel Shapes ...

Feb 22, 2017  Kustandi TS, Loh WW, Gao H et al (2010) Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography. ACS Nano 4:2561–2568 CrossRef Google Scholar 76.

Highly organised and dense vertical silicon nanowire ...

Jun 17, 2013  Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography Kustandi, TS; Loh, WW; Gao, H; Low, HY The fabrication of mono-domain highly ordered nanoporous alumina on a wafer scale by a guided electric field

Fabrication of ordered nanoporous anodic alumina ... - CORE

(2007). TP: Fabrication of Ordered Anodic Aluminum Oxide Using a Solvent-Induced Array of Block-Copolymer Micelles. Small (2010). Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography.

Wei LOH Agency for Science, Technology and Research (A ...

Noble metal and metal-dielectric-metal ultrathin films were deposited on the surfaces of ultrafine polymeric nanogratings, which were fabricated using nanoimprint lithography. ...

Monodisperse metal nanowire arrays on Si by integration of ...

The through-hole porous anodic aluminum oxide (AAO) membranes were fabricated by a two-step anodization of the aluminum alloy (AA1050) in 0.3 M

Fast anodization fabrication of AAO and barrier ...

Apr 03, 2014  Thin films of porous anodic aluminum oxide (AAO) on tin-doped indium oxide (ITO) substrates were fabricated through evaporation of a 1,000- to 2,000-nm-thick Al, followed by anodization with different durations, electrolytes, and pore widening. A faster method to obtain AAO on ITO substrates has been developed, which with 2.5 vol.% phosphoric acid at a

Wafer-scale synthesis of monolayer two-dimensional ...

Dec 13, 2019  Monolayer two-dimensional polymers (2DPs), which are one-molecule-thick, freestanding films composed of periodically linked monomers (1–4), offer an ideal material system with two key advantages.First, their properties can be tuned at the molecular level by using different monomers and polymerization chemistries (5, 6).Second, as the molecular analogs of

(PDF) Highly organised and dense vertical silicon nanowire ...

Highly organised and dense vertical silicon nanowire arrays grown in porous alumina template on <100> silicon wafers. Nanoscale Research Letters, 2013. Therese Gorisse.

SingNano Newsletter Issue 6 - Constant Contact

SEM images of near-perfect ordered AAO nanopores with different pore size, interpore distance, and lattice configuration. Reference T.S. Kustandi, W.W. Loh, H. Gao, and H.Y. Low, Wafer-Scale Near-Perfect Ordered Porous Alumina on Substrates by Step and Flash Imprint Lithography, ACS Nano, 2010, DOI: 10.1021/nn1001744

Wafer-scale metasurface for total power absorption, local ...

Wafer-scale metasurface for total power absorption, local field enhancement and ... have only been achieved using metal nanostructures produced by techniques (high resolution lithography or colloidal synthesis) that are complex and/or ... we demonstrate a metasurface that achieves the near-perfect absorption of visible-wavelength light and ...

Fast anodization fabrication of AAO and barrier ...

Apr 03, 2014  Thin films of porous anodic aluminum oxide (AAO) on tin-doped indium oxide (ITO) substrates were fabricated through evaporation of a 1,000- to 2,000-nm-thick Al, followed by anodization with different durations, electrolytes, and pore widening. ... Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint ...

Highly organised and dense vertical silicon nanowire ...

Jun 17, 2013  Wafer-scale near-perfect ordered porous alumina on substrates by step and flash imprint lithography Kustandi, TS; Loh, WW; Gao, H; Low, HY The fabrication of mono-domain highly ordered nanoporous alumina on a wafer scale by a guided electric field

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Jul 06, 2020  achieving near-perfect planarity of interconnection and metal layers in ultralarge scale integrated ULSI devices.1 During the CMP pro-cess, a rotating wafer is pressed face down against a rotating pad, while a slurry containing chemicals and abrasive particles is dragged into the pad–wafer interface. Polishing is then accomplished by the

Figure 1- Two silicon wafers, 12 and 6 respectively, commonly

the wafer is tacky or if a gentle touch by the tweezers leaves a mark on the surface of the sample, the bake process is not yet complete. Once the prebake is complete, the wafer is ready for alignment and exposure. In most forms of photolithography, the design to be created on the resist coated wafer is dictated using a photomask. A

Conditions for Fabrication of Ideally Ordered Anodic ...

Apr 11, 2020  Figure 7. Cross-sectional view near the surface of the ordered hole array of anodic porous alumina. Anodization was conducted in 0.5 M oxalic acid solution at 17°C at 40 V for 240 min. Pore widening was carried out in 5 wt % phosphoric acid at 30°C for 60 min. Pretexturing condition was the same as in Fig. 6. Figure 8.

Triple-layer Fabry-Perot/SPP aluminum absorber in the ...

Mar 15, 2015  Abstract. We report a theoretical study on a novel type of absorber that can achieve near perfect absorption in the visible and near-infrared regions by utilizing the Fabry-Perot and the surface plasmon polariton (SPP) effects. The absorber consists of an Al/dielectric/Al triple-layered structure with the top Al layer consisting of an array of ...

Nano Letters期刊最新论文, 化学/材料, - X-MOL

Ordered Vacancies on the Body-Centered Cubic PdCu Nanocatalysts Nano Lett. ... Near-Perfect Absorbing Copper Metamaterial for Solar Fuel Generation Nano Lett. ... Wafer-Scale Production of Transition Metal Dichalcogenides and Alloy Monolayers by Nanocrystal Conversion for Large-Scale Ultrathin Flexible Electronics

成果及论文 - 电子科技大学李严波课题组

2. High-speed growth and photoluminescence of porous anodic alumina films with controllable interpore distances over a large range. Y. B. Li, M. J. Zheng,* L. Ma. Applied Physics Letters, 91, 073109, 2007. 1. Fabrication of highly ordered nanoporous alumina films by stable high-field anodization. Yanbo Li, Maojun Zheng,* Li Ma, Wenzhong Shen

Wafer-scale synthesis of monolayer two-dimensional ...

Dec 13, 2019  Wafer-scale 2DP films were all produced at a sharp pentane-water interface ... These membranes were suspended with a near-perfect yield (> 99%; one broken membrane, denoted by an arrow) and appeared uniform and continuous over the entire area without cracks or voids. ... A. J. Goetz, P. Knochel, T. Bein, A. Lyapin, S. Reichlmaier, W. M. Heckl ...

(PDF) Highly organised and dense vertical silicon nanowire ...

Highly organised and dense vertical silicon nanowire arrays grown in porous alumina template on <100> silicon wafers Nanoscale Research Letters, 2013 Therese Gorisse

Patrick Su - Research Engineering Intern (HWP) - Meta ...

Modeling, characterization and process development of emerging high-volume optical and electrical devices focused on 150 mm wafer-scale low-noise SiGe

职位: Research Intern at Reality Labs,

Individually addressable epitaxial ferroelectric ...

Jun 15, 2008  Ferroelectric materials have emerged in recent years as an alternative to magnetic and dielectric materials for nonvolatile data-storage applications1,2,3,4,5. Lithography is widely used

Wafer-Scale Growth of Single-Crystal Monolayer Graphene on ...

Apr 18, 2014  Lee et al. (p. 286, published online 3 April) showed that flat, single crystals of monolayer graphene can be grown by chemical-vapor deposition on silicon wafers covered by a germanium layer that aligns the grains. The graphene can be dry-transferred to other substrates, and the germanium layer can be reused for further growth cycles.