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Dec 01, 2021.Outlook. In this way, Zhaolong Chen and colleagues developed a method for the direct growth of wafer-scale, continuous, highly oriented monolayer graphene film on sapphire using an electromagnetic
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Sep 16, 2021.Aluminum nitride, diamond semiconductors, gallium oxide and vertical GaN are all being readied, each with its own pros and cons. power supplies, solar, and trains. The devices allow the electricity to flow in the n state, and stop it in the ff state. They boost the efficiencies and minimize the energy losses in systems
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Technology of making freestanding gallium nitride (GaN) wafers has been matured at length. Gallium nitride is rigid but fragile. Chamfering of a periphery of a GaN wafer is difficult. At present edges are chamfered by a rotary whetstone of gross granules with weak pressure. Minimum roughness of the chamfered edges is still about Ra 10 m to Ra 6 m.
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